2SC5751 - NPN SILICON RF TRANSISTOR
2SC5751 Features
* Ideal for medium output power amplification
* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* Flat-lead 4-pin thin-type super minimold package ORDE
