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2SC5755 Datasheet - Toshiba Semiconductor

2SC5755 Silicon NPN Epitaxial Type Transistor

www.DataSheet4U.com 2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current .

2SC5755_ToshibaSemiconductor.PDF

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Datasheet Details

Part number:

2SC5755

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

141.90 KB

Description:

Silicon npn epitaxial type transistor.

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2SC5755 2SC5755 Silicon NPN Epitaxial Type Transistor Toshiba Semiconductor

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