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2SC5713 Datasheet - Toshiba Semiconductor

2SC5713 NPN TRANSISTOR

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) High-speed switching: tf = 50 ns (typ.) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-bas.

2SC5713 Datasheet (159.27 KB)

Preview of 2SC5713 PDF

Datasheet Details

Part number:

2SC5713

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

159.27 KB

Description:

Npn transistor.

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2SC5713 NPN TRANSISTOR Toshiba Semiconductor

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