* Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
* 6-pin lead-less minimold package ORDERING INFORMATION Part Number NE662M16-
2SC5704-T3-A Datasheet (700.05 KB)
2SC5704-T3-A
CEL
700.05 KB
Npn silicon rf transistor.
DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
.
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NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
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ADE-208-1435 (Z) Rev.0 Jul. 2001 Features
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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2SC5702 - Silicon NPN Transistor
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