Datasheet4U Logo Datasheet4U.com

2SC5703 Datasheet - Toshiba Semiconductor

2SC5703 NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage.

2SC5703 Datasheet (159.09 KB)

Preview of 2SC5703 PDF
2SC5703 Datasheet Preview Page 2 2SC5703 Datasheet Preview Page 3

Datasheet Details

Part number:

2SC5703

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

159.09 KB

Description:

Npn transistor.

📁 Related Datasheet

2SC570 SILICON NPN TRANSISTOR (Toshiba)

2SC5700 NPN TRANSISTOR (Hitachi Semiconductor)

2SC5700 Silicon NPN Transistor (Renesas)

2SC5702 Silicon NPN Epitaxial Type Transistor (Renesas)

2SC5702 Silicon NPN Transistor (Hitachi)

2SC5704 NPN SILICON RF TRANSISTOR (CEL)

2SC5704-A NPN SILICON RF TRANSISTOR (CEL)

2SC5704-T3-A NPN SILICON RF TRANSISTOR (CEL)

TAGS

2SC5703 NPN Transistor Toshiba Semiconductor

2SC5703 Distributor