2SC5703 Datasheet - Toshiba Semiconductor

2SC5703 NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage.

2SC5703_ToshibaSemiconductor.pdf