* Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2
2SC5709
Sanyo Semicon Device
37.37 KB
Npn transistor.
Ordering number : ENN6914
2SA2043 / 2SC5709
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2043 / 2SC5709
DC / DC Converter Applications
Applicat.
📁 Related Datasheet
2SC570 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS,
FEATURES . Complementary to 2SA490. • Remended for 10W High-Fidelity .
2SC5700 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
ADE-208-1435 (Z) Rev.0 Jul. 2001 Features
• High power gain low noise figure at low power o.
2SC5700 - Silicon NPN Transistor
(Renesas)
2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Features
• High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF =.
2SC5702 - Silicon NPN Epitaxial Type Transistor
(Renesas)
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
Th.
2SC5702 - Silicon NPN Transistor
(Hitachi)
2SC5702
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features
• High gain bandwidth product fT.
2SC5703 - NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5703
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5703
Unit.
2SC5704 - NPN SILICON RF TRANSISTOR
(CEL)
DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
.
2SC5704-A - NPN SILICON RF TRANSISTOR
(CEL)
DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
.
