Datasheet4U Logo Datasheet4U.com

2SC5712 Datasheet - Toshiba Semiconductor

2SC5712 NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications 2SC5712 Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base vo.

2SC5712 Datasheet (147.05 KB)

Preview of 2SC5712 PDF

Datasheet Details

Part number:

2SC5712

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

147.05 KB

Description:

Npn transistor.

📁 Related Datasheet

2SC5710 NPN TRANSISTOR (Sanyo Semicon Device)

2SC5713 NPN TRANSISTOR (Toshiba Semiconductor)

2SC5714 NPN Transistor (Toshiba Semiconductor)

2SC5716 NPN TRANSISTOR (Toshiba Semiconductor)

2SC5717 NPN TRANSISTOR (Toshiba Semiconductor)

2SC570 SILICON NPN TRANSISTOR (Toshiba)

2SC5700 NPN TRANSISTOR (Hitachi Semiconductor)

2SC5700 Silicon NPN Transistor (Renesas)

2SC5702 Silicon NPN Epitaxial Type Transistor (Renesas)

2SC5702 Silicon NPN Transistor (Hitachi)

TAGS

2SC5712 NPN Transistor Toshiba Semiconductor

Image Gallery

2SC5712 Datasheet Preview Page 2 2SC5712 Datasheet Preview Page 3

2SC5712 Distributor