* Ideal for medium output power amplification
* PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* 4-pin super minimold package ORDERING INFORMATION Par
2SC5752
NEC
116.56 KB
Npn silicon rf transistor.
www.DataSheet4U.com DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPE.
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