2SC5761 - NPN SiGe RF TRANSISTOR
2SC5761 Features
* Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
* SiGe technology (fT = 60 GHz, fmax = 60 GHz)
* Flat-lead 4-pin thin-type super minim
