* Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
* SiGe technology (fT = 60 GHz, fmax = 60 GHz)
* Flat-lead 4-pin thin-type super minim
2SC5761
NEC
106.88 KB
Npn sige rf transistor.
www.DataSheet4U.com DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD.
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