2SC5753 Datasheet - Renesas

2SC5753 NPN SILICON RF TRANSISTOR

2SC5753 Features

* Ideal for medium output power amplification

* PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

* HFT3 technology (fT = 12 GHz) adopted

* High reliability through use of gold electrodes

* Flat-lead 4-pin thin-type super minimold package ORDE

Datasheet Details

2SC5753

138.33 KB

Npn silicon rf transistor.

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2SC5753 NPN SILICON TRANSISTOR Renesas

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