2SC5699 Datasheet - Sanyo Semicon Device

2SC5699 NPN Triple Diffused Planar Silicon Transistor

2SC5699 Features

* High speed. High breakdown voltage(VCBO=1500V).

* High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process.

* t 4 Adoption

* Package Dimensions unit : mm 2174A [2SC5699] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2

Datasheet Details

2SC5699

Sanyo Semicon Device

64.24 KB

Npn triple diffused planar silicon transistor.

2SC5699 Distributor

📁 Related Datasheet

2SC5690 NPN TRANSISTOR (Sanyo Semicon Device)

2SC5692 NPN Transistor (Toshiba Semiconductor)

2SC5694 NPN TRANSISTOR (Sanyo Semicon Device)

2SC5694 NPN Transistor (INCHANGE)

2SC5695 Silicon NPN Transistor (Toshiba Semiconductor)

2SC5696 NPN Triple Diffused Planar Silicon Transistor (Sanyo)

2SC5696 NPN Transistor (INCHANGE)

2SC5698 NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

TAGS