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2SC5298 - NPN TRANSISTOR

Datasheet Summary

Features

  • High Speed : tf=100ns typ.
  • High Breakdown voltage : VCBO=1500V.
  • High reliability (Adoption of HVP process).
  • Adoption of MBIT process.
  • On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temper.

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Datasheet Details

Part number 2SC5298
Manufacturer Sanyo Semicon Device
File Size 133.62 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5298 Datasheet
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Full PDF Text Transcription

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Ordering number : EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Base 2 : Collector 3 : Emitter SANYO: TO3PML Tc=25°C Ratings 1500 800 6 10 25 3.
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