2SC5223 - NPN TRANSISTOR
Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit: mm For high-speed switching 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 q q High collector to base voltage VCBO High collector to emitter VCEO 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector powe
2SC5223 Features
* Unit µA µA V V V 1.0 1.5 V V 1 Power Transistors PC
* Ta 12 Without heat sink 600 Ta=25˚C 500 2SC5223 IC
* VCE Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 3 1 TC=100˚C 0.3 25˚C 0.1
* 25˚C 0.03 0.01 0.003 0.001 0.001 0.003 VCE(sat)
* IC Coll
