2SC522 Datasheet, Transistor, Toshiba

2SC522 Features

  • Transistor
  • High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524)
  • Useful attachment for Heat sink.
  • Various Uses for Medium Power : I C=1.5A (Max.), P C=10W

PDF File Details

Part number:

2SC522

Manufacturer:

Toshiba ↗

File Size:

122.23kb

Download:

📄 Datasheet

Description:

Silicon npn transistor.

Datasheet Preview: 2SC522 📥 Download PDF (122.23kb)
Page 2 of 2SC522 Page 3 of 2SC522

2SC522 Application

  • Applications HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. FEATURES
  • High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 6

TAGS

2SC522
SILICON
NPN
TRANSISTOR
Toshiba

📁 Related Datasheet

2SC5200 - NPN TRANSISTOR (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.

2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Remended for 100W High Fideli.

2SC5200 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High.

2SC5200 - 150 Watt Silicon NPN Power Transistors (Thinki Semiconductor)
2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943.

2SC5200 - NPN Transistor (ON Semiconductor)
NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 .

2SC5200 - NPN Transistor (STMicroelectronics)
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t.

2SC5200 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V.

2SC5200A - Silicon NPN Transistor (JILIN SINO)
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications :VCEO=230V (min)  2SA1943A  100W (Ro.

2SC5200B - Silicon NPN Transistor (JILIN SINO)
NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z:VCEO=250V (min) z 2SA1943B z 100W z(RoHS) APPLICATIONS z Power Amplifier Application.

2SC5200H - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= .

Stock and price

part
FLIP ELECTRONICS
RF TRANS NPN 10V 7GHZ 3-MCP
DigiKey
2SC5226A-5-TL-E
39000 In Stock
Qty : 12000 units
Unit Price : $0.11
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts