| Part Number | BD684 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -120V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD683 ·Minimum Lot-to... |
| Features |
ISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA
VBE(on) Base-Emitter On Voltage
IC= -1.5A; VCE...
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| Datasheet |
 BD684 Datasheet
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