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BU113

Inchange Semiconductor
Part Number BU113
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Voltage- :VCEX(SUS) = 700V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and r...
Features CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 250V; VBE= -5V VCE= 700V; VBE= -5V hFE DC Current Gain IC= 8A; VCE= 2V fT ...

Datasheet PDF File BU113 Datasheet

BU113   BU113   BU113  




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