P- Channel Enhancement Mode MOSFET
The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V
¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V
¾ Super high density cell design for extremely low
¾ Exceptional on-resistance and maximum DC
¾ SOT-23-3L package design
¾ POWER Management in Note
¾ Portable Equipment
¾ Battery Powered System
¾ DC/DC Converter
¾ Load Switch