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MATRIX MICROTECH
MATRIX MICROTECH

MT2301 Datasheet Preview

MT2301 Datasheet

P-Channel Enhancement Mode MOSFET

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MT2301 pdf
‹ DESCRIPTION
MT2301
P- Channel Enhancement Mode MOSFET
The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
‹ FEATURES
‹ APPLICATIONS
¾ -20V/-2.8A, RDS(ON) = 120m@ VGS = -4.5V
¾ -20V/-2.5A, RDS(ON) = 170m@ VGS = -2.5V
¾ Super high density cell design for extremely low
RDS(ON)
¾ Exceptional on-resistance and maximum DC
current capability
¾ SOT-23-3L package design
¾ POWER Management in Note
¾ Portable Equipment
¾ Battery Powered System
¾ DC/DC Converter
¾ Load Switch
¾ DSC
‹ PIN CONFIGURATION
DRAIN
2
SOURCE
5
GATE
4
-1-
www.matrix-microtech.com.tw



MATRIX MICROTECH
MATRIX MICROTECH

MT2301 Datasheet Preview

MT2301 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

MT2301 pdf
‹ ABSOLUTE MAXIMUM RATINGS
(TA=25Unless Otherwise Noted)
MT2301
P- Channel Enhancement Mode MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25
TA = 70
Continuous Source Current (Diode Conduction)
Power Dissipation
TA = 25
TA = 70
Operating junction temperature range
Storage temperature range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ
TSTG
Maximum
-20
±12
-2.8
-1.5
-10
-1.6
1.25
0.8
150
- 55 to 150
Unit
V
V
A
A
A
W
OC
OC
‹ THERMAL RESISTANCE RATINGS
Thermal Resistance
Junction-to-Ambient
Symbol
RθJA
Maximum
100
Unit
OC/W
‹ ORDERING INFORMATION
Device
MT2301
Package
SOT-23
Shipping
3000 PCS / Tape & Reel
-2-
www.matrix-microtech.com.tw


Part Number MT2301
Description P-Channel Enhancement Mode MOSFET
Maker MATRIX MICROTECH
Total Page 6 Pages
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