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Mostech
Mostech

MT2301 Datasheet Preview

MT2301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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MT2301 pdf
MMostech
Mostech electronics C orp.
MT 2301
P-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
-20V
-3.6A
80 @ VGS = -4.5V
100 @ VGS = -2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-20
12
-3.6
-11
-1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
100
C /W
1



Mostech
Mostech

MT2301 Datasheet Preview

MT2301 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

MT2301 pdf
MT 2301
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
Total Gate Charge
tf
Qg
Gate-S ource Charge
Qgs
Gate-Drain Charge
Qgd
C ondition
VGS =0V, ID =-250uA
VDS =-16V, VGS= 0V
VGS = 10V, VDS= 0V
VDS =VGS, ID =-250uA
VGS =-4.5V, ID = -3.0A
VGS = -2.5V, ID= -2.0A
VDS = -5V, VGS = -4.5V
VDS = -5V, ID= -5A
VDS = -15V, VGS = 0V
f =1.0MHZ
VDD = -10V,
ID = -1A,
VGS = -4.5V,
R L = 10 ohm
R GEN = 6 ohm
VDS = -10V, ID = -3A,
VGS = -4.5V
Min Typ C Max Unit
-20 V
1 uA
100 nA
-0.5 -0.8 -1.5 V
70 80 m-ohm
85 100 m-ohm
-15 A
4S
586 PF
101 PF
59 PF
6.5 ns
32.1 ns
58.4 ns
48 ns
5.92 nC
1.36 nC
1.4 nC
2


Part Number MT2301
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Mostech
Total Page 5 Pages
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MT2301 pdf
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