http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Tuofeng Semiconductor
Tuofeng Semiconductor

2016 Datasheet Preview

2016 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

2016 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
2016
N-Channel Enhancement Mode Field Effect Transistor
General Description
The 2016 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = 20V
ID = 4.2 A (VGS = 4.5V)
RDS(ON) < 50m(VGS = 4.5V)
RDS(ON) < 63m(VGS = 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
4.2
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W



Tuofeng Semiconductor
Tuofeng Semiconductor

2016 Datasheet Preview

2016 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

2016 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2016
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4.2A
VGS=2.5V, ID=3.7A
Min Typ Max Units
20 V
1 µA
100 nA
0.4 0.6
1
V
15 A
41 50 m
52 63 m
gFS Forward Transconductance
VDS=5V, ID=4.2A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=4.2A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=2.7,
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
8
0.76
436
66
44
3
6.2
1.6
0.5
5.5
6.3
40
12.7
12.3
3.5
S
1.2 V
2A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4 : June 2005


Part Number 2016
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Tuofeng Semiconductor
Total Page 4 Pages
PDF Download
2016 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 2010 Double Sided Chip Resistor TT electronics
TT electronics
2010 pdf
2 2010DN FYP2010DN Fairchild Semiconductor
Fairchild Semiconductor
2010DN pdf
3 2012E Tuning Fork SMD Quartz Crystal YIC
YIC
2012E pdf
4 2012ES Tuning Fork SMD Quartz Crystal YIC
YIC
2012ES pdf
5 2015 Single P-Channel Power MOSFET Tuofeng Semiconductor
Tuofeng Semiconductor
2015 pdf
6 2015M MICROWAVEBIPOLAR ETC
ETC
2015M pdf
7 2016 N-Channel Enhancement Mode Field Effect Transistor Tuofeng Semiconductor
Tuofeng Semiconductor
2016 pdf
8 2016L030 Resettable PTC Littelfuse
Littelfuse
2016L030 pdf
9 2016L050 Resettable PTC Littelfuse
Littelfuse
2016L050 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components