ACE2607B Datasheet - ACE Technology

P-Channel Enhancement Mode Field Effect Transistor

ACE2607B Features

* VDS(V)=-30V, ID=-3.5A

* RDS(ON)=52mΩ@VGS=-10V

* RDS(ON)=68mΩ@VGS=-4.5V

* High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Puls

ACE2607B General Description

ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are ne.

ACE2607B Datasheet (328.97 KB)

ACE2607B Datasheet Preview — Preview of ACE2607B PDF

Datasheet Details

Part number:

ACE2607B

Manufacturer:

ACE Technology

File Size:

328.97 KB

Description:

P-channel enhancement mode field effect transistor.

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ACE2607B P-Channel Enhancement Mode Field Effect Transistor ACE Technology

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ACE2607B Features

ACE2607B General Description

Datasheet Details

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Description:

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