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ACE2607B - P-Channel Enhancement Mode Field Effect Transistor

Description

ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

Features

  • VDS(V)=-30V, ID=-3.5A.
  • RDS(ON)=52mΩ@VGS=-10V.
  • RDS(ON)=68mΩ@VGS=-4.5V.
  • High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Pulse (Note 2) ID -3.5 A -20 Power Dissipation(1) (Note 1) PD 650 mW Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L 1 VER 1.3 1 ACE2607B P-Channel Enhance.

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Datasheet preview – ACE2607B

Datasheet Details

Part number ACE2607B
Manufacturer ACE Technology
File Size 328.97 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet ACE2607B Datasheet
Additional preview pages of the ACE2607B datasheet.

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Full PDF Text Transcription

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ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features  VDS(V)=-30V, ID=-3.5A  RDS(ON)=52mΩ@VGS=-10V  RDS(ON)=68mΩ@VGS=-4.5V  High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Pulse (Note 2) ID -3.
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