ACE2607B - P-Channel Enhancement Mode Field Effect Transistor

ACE Technology

Datasheet Details

ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance..

VDS(V)=-30V, ID=-3.5A.
RDS(ON)=52mΩ@VGS=-10V.
RDS(ON)=68mΩ@VGS=-4.5V.
High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA=25℃ Pulse (Note 2) ID -3.5 A -20 Power Dissipation(1) (Note 1) PD 650 mW Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L 1 VER 1.3 1 ACE2607B P-Channel Enhance.

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