ACE Technology ACE2301
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.| Part No. | ACE2301 |
|---|---|
| Datasheet | ACE2301 Download |
| Manufacturer |  ACE Technology |
| Description | P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
P-Channel Enhancement Mode MOSFETFEATURES
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● VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1) Maximum Power Dissipation TA=25℃ TA=70℃ Symbol VDS VGS ID IDM PD TJ TSTG RθJA Max Unit -20 V ±12 V -2.2 A -8 A 1.25 W 0.8 -55 to 150 OC -55 to 150 OC O 140 C/W Operating Junction Temperature Storage Temperature Range Junction to Ambient Thermal Resistance (PCB mounted)2) 2 2.1-in 2oz Cu PCB board. Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 3.Guaranteed by design; not subject to production testing. VER 1.2 1 ACE2301 Technology Packaging Type SOT-23-3 3 P-Channel Enhancement Mode MOSFET Pin SymbolDESCRIPTION
1 G Gate 2 S Source 3 D Drain 1 2 Ordering information Selection Guide ACE2301 XX + H Haloge...
