ACE2301 - P-Channel Enhancement Mode MOSFET

Product Overview

ACE Technology

Part number	ACE2301
Manufacturer	ACE Technology
File Size	114.79 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	ACE2301 Datasheet
Additional preview pages of the ACE2301 datasheet.

The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1) Maximum Power Dissipation TA=25℃ TA=70℃ Symbol VDS VGS ID IDM PD TJ TSTG RθJA Max Unit -20 V ±12 V -2.2 A -8 A 1.25 W 0.8 -55 to 150 OC -55 to 150 OC O 140 C/.

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Published: Mar 13, 2010 |