ACE2305 - P-Channel Enhancement Mode MOSFET

Product Overview

ACE Technology

Part number	ACE2305
Manufacturer	ACE Technology
File Size	215.52 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	ACE2305 Datasheet
Additional preview pages of the ACE2305 datasheet.

The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

-15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V -15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V -15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Published: Mar 13, 2010 |