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ACE2303 - P-Channel Enhancement Mode MOSFET

General Description

The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -30V/-2.6A, RDS(ON)=130mΩ@VGS=-10V -30V/-2.0A, RDS(ON)=180mΩ@VGS=-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Datasheet Details

Part number ACE2303
Manufacturer ACE Technology
File Size 289.07 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE2303 Datasheet

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www.DataSheet4U.com ACE2303 Technology Description P-Channel Enhancement Mode MOSFET The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • • • • • • • -30V/-2.6A, RDS(ON)=130mΩ@VGS=-10V -30V/-2.0A, RDS(ON)=180mΩ@VGS=-4.