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ACE2302 - N-Channel Enhancement Mode MOSFET

General Description

The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/3.6A, RDS(ON)=80mΩ@VGS=4.5V 20V/3.1A, RDS(ON)=95mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ACE2302
Manufacturer ACE Technology
File Size 224.73 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE2302 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  www.DataSheet4U.com                                                                                        ACE2302                                               Technology Description N-Channel Enhancement Mode MOSFET The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • • • • • • 20V/3.6A, RDS(ON)=80mΩ@VGS=4.5V 20V/3.1A, RDS(ON)=95mΩ@VGS=2.