Datasheet Summary
..
Technology
Description
N-Channel Enhancement Mode MOSFET
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
- -
- -
- -
- -
- -
- 30V/3.2A, RDS(ON)=65mΩ@VGS=10V 30V/2.0A, RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for...