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ACE Technology

ACE3926E Datasheet Preview

ACE3926E Datasheet

DUAL N-Channel MOSFET

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ACE3926E
Dual N-Channel 20-V MOSFET
Description
The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
Power Routing
Li Ion Battery Packs
Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±12 V
13
ID
A
10
IDM 50 A
IS 7 A
2.5
PD
W
1.5
TJ/TSTG -55~150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1




ACE Technology

ACE3926E Datasheet Preview

ACE3926E Datasheet

DUAL N-Channel MOSFET

No Preview Available !

Packaging Type
DFN3*3-8L
ACE3926E
Dual N-Channel 20-V MOSFET
Ordering information
ACE3926E NN + H
Halogen - free
Pb - free
NN : DFN3*3-8L
VER 1.1 2


Part Number ACE3926E
Description DUAL N-Channel MOSFET
Maker ACE Technology
Total Page 7 Pages
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