ACE3401 - P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited
ACE3401 Features
* -30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V -30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2A, RDS(ON)=75mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-re
