ACE3413 - P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited
ACE3413 Features
* -20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A, RDS(ON)=145mΩ@VGS=-1.8V -20V/-1.0A, RDS(ON)=210mΩ@VGS=-1.25V Super high density cell
