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ACE3413

P-Channel Enhancement Mode MOSFET

ACE3413 Features

* -20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A, RDS(ON)=145mΩ@VGS=-1.8V -20V/-1.0A, RDS(ON)=210mΩ@VGS=-1.25V Super high density cell

ACE3413 General Description

P-Channel Enhancement Mode MOSFET The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited.

ACE3413 Datasheet (193.46 KB)

Preview of ACE3413 PDF

Datasheet Details

Part number:

ACE3413

Manufacturer:

ACE Technology

File Size:

193.46 KB

Description:

P-channel enhancement mode mosfet.

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ACE3413 P-Channel Enhancement Mode MOSFET ACE Technology

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