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SSC8027GS6 - P-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number SSC8027GS6
Manufacturer AFSEMI
File Size 222.52 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8027GS6-AFSEMI.pdf

SSC8027GS6 Product details

Description

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.Excellent thermal and electrical capabilities. Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm

Features

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