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SSC8027GS6 Datasheet - AFSEMI

P-Channel Enhancement Mode MOSFET

SSC8027GS6 General Description

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line po.

SSC8027GS6 Datasheet (222.52 KB)

Preview of SSC8027GS6 PDF

Datasheet Details

Part number:

SSC8027GS6

Manufacturer:

AFSEMI

File Size:

222.52 KB

Description:

P-channel enhancement mode mosfet.

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SSC8027GS6 P-Channel Enhancement Mode MOSFET AFSEMI

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