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SSC8033GS6 - P-Channel Enhancement Mode MOSFET

General Description

on-state resistance.

Key Features

  • s.

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Datasheet Details

Part number SSC8033GS6
Manufacturer AFSEMI
File Size 548.95 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8033GS6 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8033GS6 P-Channel Enhancement Mode MOSFET  Features  Applications  TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 55mR@-10V 68mR@-4V5 ID -3A  High Side DC/DC Converter  High Side Driver for Brushless DC Motor  Portable DVD, DPF  Pin configuration  General Description Top View D This P-Channel enhancement mode power FETs are 3 produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, 12 and low in-line power loss are needed in a very small GS outline surface mount package.  Package Information SSC-1V1 http://www.afsemi.