SSC80A2GT1 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin Configuration Top View Package Information S

Key Features

s.
VDS VGS 100V ±20V RDSon TYP 129mR@10V 130mR@4V5 ID 5A.
General.

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SSC80A2GT1 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC80A2GT1
Manufacturer	AFSEMI
File Size	157.09 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC80A2GT1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC80A2GT1 N-Channel Enhancement Mode MOSFET  Features  VDS VGS 100V ±20V RDSon TYP 129mR@10V 130mR@4V5 ID 5A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information SSC-V1.0 Package :TO-92 http://www.afsemi.