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SSC8205GTA - Common Drain N-Channel Enhancement Mode MOSFET

General Description

Case: TSSOP-8 Case Material: Molded Plastic.

Package Information PIN NUMBER 1 2,3 4 5 6,7 8 NAME D S1 G1 G2 S2 D FUNCTION DRAIN SOURCE1 GATE1 GATE2 SOUR

Key Features

  • s VDS VGS RDSon TYP ID 18mR@4V5 20V ±12V 20mR@3V85 6A 22mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current.

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Datasheet Details

Part number SSC8205GTA
Manufacturer AFSEMI
File Size 322.63 KB
Description Common Drain N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8205GTA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8205GTA Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID 18mR@4V5 20V ±12V 20mR@3V85 6A 22mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  Applications  Li-ion battery protection ;  Load swich  Pin configuration Top View  General Description Case: TSSOP-8 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208  Package Information PIN NUMBER 1 2,3 4 5 6,7 8 NAME D S1 G1 G2 S2 D FUNCTION DRAIN SOURCE1 GATE1 GATE2 SOURCE2 DRAIN SSC-1V0 1/5 http://www.afsemi.