SSC8205GTA mosfet equivalent, common drain n-channel enhancement mode mosfet.
VDS VGS
RDSon TYP
ID
18mR@4V5
20V ±12V 20mR@3V85
6A
22mR@2V5
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
High Power .
* Li-ion battery protection ;
* Load swich
* Pin configuration
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* General Description
Case: TSS.
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