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SSC8205GTA Datasheet Preview

SSC8205GTA Datasheet

Common Drain N-Channel Enhancement Mode MOSFET

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SSC8205GTA
Common Drain N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
18mR@4V5
20V ±12V 20mR@3V85
6A
22mR@2V5
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
High Power and Current handling capability
Fully Characterized Avalanche Voltage and Current
Applications
Li-ion battery protection ;
Load swich
Pin configuration
Top View
General Description
Case: TSSOP-8
Case Material: Molded Plastic. UL Flammability
Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Package Information
PIN NUMBER
1
2,3
4
5
6,7
8
NAME
D
S1
G1
G2
S2
D
FUNCTION
DRAIN
SOURCE1
GATE1
GATE2
SOURCE2
DRAIN
SSC-1V0
1/5
http://www.afsemi.com




AFSEMI

SSC8205GTA Datasheet Preview

SSC8205GTA Datasheet

Common Drain N-Channel Enhancement Mode MOSFET

No Preview Available !

SSC8205GTA
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Storage Temperature Range
Symbol
VDSS
VGSS
ID
PD
Topr
Tstg
Ratings
20
±12
6
1.25
150
-55/150
Unit
V
A
mW
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Current
Source-drain (diode forward) voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Symbol
Test Conditions
OFF CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
VGS = 0V, ID = 250uA
VDS = 16V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 2)
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
VGS = 4.5V, ID = 2A
VGS = 3.8V, ID = 2A
VGS = 2.5V, ID =2A
GFS VDS =5V, ID = 4.5A
IS
VSD VGS=0V,ID=1.25A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
VDS = 8V, VGS = 0V
F = 1.0MHz
QG
QGS
QGD
VDS=10V, ID=6A,
VGS=4.5V
SWITCHING CHARACTERISTICS
TD(ON)
tr
TD(OFF)
VDD = 10V, RL=10Ω,ID = 1Α,
VGEN = 4.5V, RG = 6R
tf
Min Typ Max
20 22 --
-- 2.5 1000
-- -- ±100
0.5 0.72 1
-- 18 23
-- 20 25
-- 22 33
-- 10 --
-- -- 1.7
-- 0.8 1.0
-- 600 --
-- 330 --
-- 140 --
-- 10 15
-- 2.3 --
-- 2.9 --
-- 8 20
10 25
-- 35 70
30 60
Unit
V
nA
nA
V
mR
S
A
V
pF
nC
ns
SSC-1V0
2/5
http://www.afsemi.com


Part Number SSC8205GTA
Description Common Drain N-Channel Enhancement Mode MOSFET
Maker AFSEMI
Total Page 5 Pages
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