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AFSEMI

SSC8222GN2 Datasheet Preview

SSC8222GN2 Datasheet

N-Channel Enhancement Mode MOSFET

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SSC8222GN2
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
20V ±12V
RDSon TYP
5.6mR@4V5
7.5mR@2V5
13mR@2V5
ID
10A
Applications
Li-ion battery protection ;
Load swich
Pin configuration
Bottom View
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
High Power and Current handling capability
Fully Characterized Avalanche Voltage and Current
General Description
The SSC8222GN2 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
DFN2X2-6L
Package Information
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future




AFSEMI

SSC8222GN2 Datasheet Preview

SSC8222GN2 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SSC8222GN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Currentnote1
TA=25
TA=100
ID
Total Power Dissipation
Operating and Storage Temperature Range
PD
Topr
Storage Temperature Range
Tstg
Note1The maximum current rating is package limited.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings
20
±12
10
7
2.8
150
-55/150
Unit
V
A
W
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Current
Source-drain (diode forward) voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Symbol
Test Conditions
OFF CHARACTERISTICS (Note 2)
V(BR)DSS
VGS = 0V, ID = 250uA
IDSS VDS = 16V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 2)
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
VGS = 4.5V, ID = 10A
VGS = 2.5V, ID = 10A
VGS = 1.8V, ID = 5A
GFS VDS =5V, ID = 4.5A
IS
VSD VGS=0V,ID=0.5A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
VDS = 8V, VGS = 0V
F = 1.0MHz
QG
QGS
QGD
VDS=10V, ID=6A,
VGS=4.5V
SWITCHING CHARACTERISTICS
TD(ON)
tr
TD(off)
tf
VDD = 10V, RL=10Ω,ID = 1Α,
VGEN = 4.5V, RG = 6R
Min Typ Max
20 -- --
-- -- 1
-- -- ±100
0.5 0.7 1
-- 5.6 8
-- 7.5 10
-- 13 15
-- 8 --
-- -- 1.7
-- 0.8 1.3
-- 1900 --
-- 430 --
-- 140 --
-- 10 15
-- 2.3 --
-- 2.9 --
-- 8 20
10 25
-- 35 70
30 60
Unit
V
uA
nA
V
mR
S
A
V
pF
nC
ns
2/5
SSC-V1.0
http://www.afsemi.com
Analog Future


Part Number SSC8222GN2
Description N-Channel Enhancement Mode MOSFET
Maker AFSEMI
Total Page 5 Pages
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