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SSC8313GS1
Dual P-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP 38mR@-4V5
ID
Applications
Load Switch
Portable Devices DCDC conversion
-12V ±8V 47mR@-2V5 -6A 61mR@-1V8
Pin Configuration
General Description
Top View
D1 D1 D2 D2
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
S1 G1 S2 G2
low in-line power dissipation are needed in a very small
D: Drain; G: Gate; S: Source
outline surface mount package. Excellent thermal and
electrical capabilities.
Package Information
⑧ ⑦ ⑥⑤
①② ③ ④
SOP8 Unit:mm
SSC-1V0
http://www.afsemi.
SSC8313GS1 Datasheet
