Datasheet Details
| Part number | SSC8313GS1 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 197.21 KB | 
| Description | Dual P-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
           | 
    
| Part number | SSC8313GS1 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 197.21 KB | 
| Description | Dual P-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
           | 
    
Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1 G1 S2 G2 low in-line power dissipation are needed in a very small D: Drain; G: Gate; S: Source outline surface mount package.Excellent thermal and electrical capabilities. Package Informat
📁 SSC8313GS1 Similar Datasheet