SSC8322GN2 Description
SSC8322GN2 bines 2 N-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. 1/4 Analog Future SSC8322GN2 Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage.