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SSC8323GN2 - Dual P-Channel Enhancement Mode MOSFET

General Description

SSC8323GN2 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Package Infor

Key Features

  • s VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8 ID -3.5A.

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Datasheet Details

Part number SSC8323GN2
Manufacturer AFSEMI
File Size 213.25 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8323GN2 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8323GN2 Dual P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8 ID -3.5A  Applications  Li Battery Charging;  High Side DC/DC Converter;  Load Switch;  Power Management in Portable, Battery Powered Devices  Pin configuration Top View  General Description SSC8323GN2 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information SSC-1V0 Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 - G 0.2 0.25 0.3 H 0.25 0.