The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSC8325GS1
Dual P-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP 38mR@-4V5
ID ESD
Applications
Load Switch
Portable Devices DCDC conversion
-20V ±8V
47mR@-2V5 61mR@-1V8
-6A 3KV
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
D: Drain; G: Gate; S: Source
electrical capabilities.
Package Information
⑧ ⑦ ⑥⑤
①② ③ ④
SOP8 Unit:mm
SSC-1V0
http://www.afsemi.
SSC8325GS1 Datasheet
