SSC8329GS1 - Dual P-Channel Enhancement Mode MOSFET

General Description

on-state resistance.

Key Features

s VDS -20V VGS ±12V RDSon TYP 13mR@-4V5V 16mR@-2V5 ID -18A.

SSC8329GS1 dual p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8329GS1
Manufacturer	AFSEMI
File Size	594.70 KB
Description	Dual P-Channel Enhancement Mode MOSFET
Datasheet	SSC8329GS1 Datasheet

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Full PDF Text Transcription (Reference)

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SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 13mR@-4V5V 16mR@-2V5 ID -18A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. S1 G1 S2  Package Information D2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.