SSC8329GS1 mosfet equivalent, dual p-channel enhancement mode mosfet.
VDS -20V
VGS ±12V
RDSon TYP 13mR@-4V5V 16mR@-2V5
ID -18A
* Applications
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* G.
* Load Switch
* DCDC conversion
* NB battery
* Pin configuration
* General Description
This device .
This device is produced with high cell density, DMOS
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D1 D1 D2
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of giv.
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