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SSC8LA0GT8 - N-Channel Enhancement Mode MOSFET

General Description

excellent RDS(ON) and low gate charge.

suitable for use as a load switch or in PWM applications.

Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8LA0GT8 Absolute Max

Key Features

  • s VDS VGS RDSon TYP ID.

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Datasheet Details

Part number SSC8LA0GT8
Manufacturer AFSEMI
File Size 582.83 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8LA0GT8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8LA0GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 100V ±20V 9mR@10V 13mR@4V5 60A  Pin Configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8LA0GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Operating and Storage Junction Temperature Range Pulsed Drain Current (Note 2) Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1) Avalanche energy L=0.