AGM310M datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

-30V 17mΩ -8A
* Advance high cell density Trench technology
*Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*Low Thermal .

Application

* Features -30V 17mΩ -8A
* Advance high cell density Trench technology
*Low RDS(ON) to minimize conduct.

Description

The AGM310M combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID This device is ideal for load switch and battery 30V 12mΩ 10A protection applications. <.

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