AGM311MAP datasheet, mosfet equivalent, AGMSEMI

datasheet Download (Size : 502.55KB)

Features and benefits

BVDSS RDSON ID 30V 10.5mΩ 25A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switch.

Application

* Features BVDSS RDSON ID 30V 10.5mΩ 25A
* Advance high cell density Trench technology
* Low RDS(ON).

Description

The AGM311MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 30.

Image gallery