AGM318D mosfet equivalent, mosfet.
* Advance high cell density Trench technology
TO-252 Pin Configuration
* Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*Lo.
* Features
* Advance high cell density Trench technology
TO-252 Pin Configuration
* Low RDS(ON) to minim.
The AGM318D combines advanced trench
Product Summary
MOSFET technology with a low resistance package
to provide extremely low RDS(ON) .
BVDSS
RDSON
ID
This device is ideal for load switch and battery
30V
18mΩ
20A
protection applications.
.
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