AGMH022N10C mosfet equivalent, mosfet.
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
* Low Thermal resistance
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* Features
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Lo.
The AGMH022N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
* Features
* Advance high cell density Trenc.
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