AGMH022P10H mosfet equivalent, mosfet.
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
*Low Gate Charge for fast switching
*Low Thermal resistance
*1.
* Features
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
*Low.
The AGMH022P10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
This device is ideal for load switch and battery protection applications.
* Features
* Advance high cell density Trenc.
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