AGMH12N10C datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

BVDSS RDSON ID 100V 9.6mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switch.

Application

* Features BVDSS RDSON ID 100V 9.6mΩ 55A
* Advance high cell density Trench technology
* Low RDS(ON).

Description

The AGMH12N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 1.

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