Datasheet Summary
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PRELIMINARY
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS s Single 1.8 volt read, program and erase (1.7 to 1.9 volt) s Multiplexed Data and Address for reduced I/O count
- A0- A15 multiplexed as D0- D15
- Addresses are latched with AVD# control inputs while CE# low s Simultaneous Read/Write operation
- Data can be continuously read from one bank while executing erase/program functions in other bank
- Zero latency between read and write operations s Read access times at 54 MHz/40 MHz
- Burst access times of 13.5/20 ns @ 30 pF at industrial temperature range
- Asynchronous random...