Datasheet4U Logo Datasheet4U.com

AM29BDS640H - (AM29BDS128H / AM29BDS640H) Burst Mode Flash Memory

This page provides the datasheet information for the AM29BDS640H, a member of the AM29BDS128H (AM29BDS128H / AM29BDS640H) Burst Mode Flash Memory family.

Description

The Am29BDS128H/Am29BDS640H is a 128 or 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 8,388,608 or 4,194,304 words of 16 bits each.

This device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the memory array.

Features

  • Handshaking feature.
  • Provides host system with minimum possible latency by monitoring RDY.
  • Reduced Wait-state handshaking option further reduces initial access cycles required for burst accesses beginning on even addresses.
  • Hardware reset input (RESET#).
  • Hardware method to reset the device for reading array data WP# input.
  • Write protect (WP#) function allows protection of the four highest and four lowest 4 kWord boot sectors, regardless of sec.

📥 Download Datasheet

Datasheet preview – AM29BDS640H

Datasheet Details

Part number AM29BDS640H
Manufacturer AMD
File Size 1.58 MB
Description (AM29BDS128H / AM29BDS640H) Burst Mode Flash Memory
Datasheet download datasheet AM29BDS640H Datasheet
Additional preview pages of the AM29BDS640H datasheet.
Other Datasheets by AMD

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Am29BDS128H/Am29BDS640H Data Sheet ( RETIRED PRODUCT (AM29BDS40H ONLY) The Am29BDS640H has been retired and is not recommended for designs. For new designs, S29WS064K supersedes Am29BDS640H. Please refer to the S29WS-K family data sheet for specifications and ordering information. The Am29BDS128H is available and is not affected by this revision. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary.
Published: |