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AM29BDS643D - Burst Mode Flash Memory

Description

The Am29BDS643 is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 4,194,304 words of 16 bits each.

This device uses a single VCC of 1.7 to 1.9 V to read, program, and erase the memory array.

Features

  • When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode . Power consumption is greatly reduced in both modes. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. The device can improve overall system performance by allowing a host system to program or erase in one ban.

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Datasheet preview – AM29BDS643D

Datasheet Details

Part number AM29BDS643D
Manufacturer AMD
File Size 681.30 KB
Description Burst Mode Flash Memory
Datasheet download datasheet AM29BDS643D Datasheet
Additional preview pages of the AM29BDS643D datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com PRELIMINARY Am29BDS643D 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS s Single 1.8 volt read, program and erase (1.7 to 1.9 volt) s Multiplexed Data and Address for reduced I/O count — A0–A15 multiplexed as D0–D15 — Addresses are latched with AVD# control inputs while CE# low s Simultaneous Read/Write operation — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations s Read access times at 54 MHz/40 MHz — Burst access times of 13.
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