VDS = 250V ID =4A
RDS(ON) < 1700mΩ@ VGS=10V (Type:1000mΩ)
Application
Automative lighting Load switch Uninterruptible power supply
Package Marking and Ordering Infor.
, should be limited by total power dissipation.
2
AP4N25MI RVE1.0
Typical Characteristics
AP4N25MI
250V N-Channel .
AP4N25MI
250V N-Channel Enhancement Mode MOSFET
The AP4N25MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or i.
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