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ARTS CHIP

IRFP150N Datasheet Preview

IRFP150N Datasheet

Power MOSFET

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IRFP150N
HEXFET Power MOSFET
FEATURES
z Avalanche Process Technology
z Dynamic dv/dt Rating
z 175 Operating Temperature
z Fast Switching
z Fully Avalanche Rated
Description
Fifth Generation HEXFETs from Artschip utilize advanced
processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety
of applications.
The TO-247 package is preferred for commercial industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting hole.
TO-3P
VDSS=100V
RDS(on)=0.036W
ID=42A
Absolute Maximum Ratings
ID @ Tc=25
ID @ Tc=100
IDM
PD @ Tc=25
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @10V
Continuous Drain Current, VGS @10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/td
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RQJC
RQCS
RQJA
Parameter
Junction-to-Case
Case –to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
42
30
140
160
1.1
±20
420
22
16
5.0
-55 to +175
300 (1.6mm from case)
10 Ibf•in (1.1N•m)
Units
A
W
W/
V
mJ
A
mJ
V/ns
Typ.
-
0.24
-
Max.
0.95
-
40
Units
/W
www.artschip.com
1




ARTS CHIP

IRFP150N Datasheet Preview

IRFP150N Datasheet

Power MOSFET

No Preview Available !

IRFP150N
HEXFET Power MOSFET
Electrical Characteristics @ TJ=25 (Unless otherwise specified)
V(BR)DSS
DV(BR)DSS/DTJ
RDS(on)
gfs
IDSS
Parameter
Drain-to-Source Breakdown
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Min.
100
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.11
-
-
-
-
-
-
-
-
-
11
56
45
40
5.0
13
Max.
-
-
0.036
4.0
25
250
100
-100
110
15
58
-
-
-
-
-
Units
V
V/
W
V
µA
nA
nC
ns
nH
-
Conditions
VGS=0V, ID=250µA
Reference to 25 , ID=1mA
VGS=10V, ID=23A
VDS=VGS, ID=250µA
VDS=100V, VGS=0V
VDS=80V, VGS=0V, TJ=150
VGS=20V
VGS=-20V
ID=22A
VDS=80V
VGS=10V, See Fig. 6 and 13
VDD=50V
ID=22A
RG=3.6W
RD=2.9W, See Fig. 10
Between lead,
6mm (0.25in.)
From package
And center of die
contact
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
1900 -
pF VGS=0V
- 450 -
VDS=25V
- 230 -
f=1.0MHz, See Fig.5
Source-Drain Ratings and Characteristics
Parameter
Is Continuous Source Current
ISM Pulsed Source Current (Body Diode)
Min.
-
-
Typ. Max.
- 42
- 140
Units
A
Conditions
MOSFET symbol
showing
the
integral reverse p-n
junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
- - 1.3 V TJ=25 , IS=23A, VGS=0V
-
180 270 ns
TJ=25 , IF=22A
- 1.2 1.8 µC di/dt=100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Starting TJ=25 , L=1.7mH
RG=25W, IAS=22A. (See Figure 12)
ISD40A, di/dt180A/µs, VDDV(BR)DSS, TJ175
Pulse width 300µs; duty cycle2%.
Uses IRF1310N data and test conditions
www.artschip.com
2


Part Number IRFP150N
Description Power MOSFET
Maker ARTS CHIP
Total Page 7 Pages
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